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Silicon-based diode temperature sensor





Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла (Physics and Chemistry of Solid State), 2, 499 (2010).

Diode temperature sensor can be used for static and dynamic temperature measurements in the 1.5 K to 450 K temperature range.

Three types of sensor packages are offered:

    Cylindrical canister package (CP version) with dimensions: 3.0 mm in diameter and 5.0 mm long.
    Micro-package (MP version) with dimensions: 1.2 mm in diameter and 1.0 mm thick.
    The micro-package with plate (MPP version). Dimensions of plate: 2 mm square by 0.15 mm thick.

Silicon-based diode sensors

Overall and detailed views of the micro-thermometer design

Micro-package (MP model):- 1.2 mm in diameter and 1.0 mm thick



The temperature sensing element is contained within an alumina tube which has copper end caps. The element is bonded to the one of end cap and electrical contact made to both caps through 30-50 µm gold wires. Finally, copper wires are soldered to the end caps to facilitate four-terminal measurements.


The micro-packaged thermometer with plate, MPP model




The micro-packaged thermometer can also be bonded to a sapphire plate (2 mm square by 0.15 mm thick) for ease of mounting on a surface. Electrical contacts made of copper wires, which are soldered to the plate to provide measurements.


L I T E R A T U R E

     
  1. Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла (Physics and Chemistry of Solid State), 2, 499 (2010).

  2.  
  3. N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, V.F. Mitin,  E.F. Venger,  Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications, Sensors and Actuators A, 92, 191-196 (2001).

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  5. Download the article  N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin,  Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals, Semiconductor Physics, Quantum Electronics & Optoelectronics, 3, 359-370 (2000).



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