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Nano-technology Research Project
Project duration: 2010 - 2014
This project deals with development of novel technology, nano-scale multifunctional materials and devices for application in sensors electronics.
The project executes in collaboration with the V.Lashkaryov Institute of Semiconductor Physics (Kyiv, Ukraine), State Enterprise Research Institute “Orion” (Kyiv, Ukraine), National Technical University of Ukraine “KPI” (Kyiv, Ukraine), and University of York (Heslington, York, UK).
The main papers that have emerged from this project:
1. V.F.Mitin, V.K.Lazarov, P.M.Lytvyn, P.J.Hasnip, V.V.Kholevchuk, L.A.Matveeva, E.Yu.Kolyadina, I.E.Kotenko, V.V.Mitin, and E.F.Venger. Tailoring the electrical properties of Ge/GaAs by film deposition rate and preparation of fully compensated Ge films. Physical Review B 84, 125316 (2011).
2. V.F.Mitin, V.K.Lazarov, P.M.Lytvyn, V.V.Kholevchuk, L.A.Matveeva, I.E.Kotenko, V.V.Mitin, E.F.Venger. Effect of deposition rate on properties of thin Ge films on GaAs. Proceedings of International Conference on the Physics and Technology of Thin Films and Nanosystems (ICPTTFN-XIII), 16-21 May 2011, Ivano-Frankivsk, Ukraine, v. 2, p. 34.
3. V.F.Mitin, P.M.Lytvyn, V.V.Kholevchuk, L.A.Matveeva, E.Yu.Kolyadina, E.F.Venger V.K.Lazarov, P.J.Hasnip I.E.Kotenko, V.V.Mitin. Nano-thin films of Ge on GaAs: preparation and properties. Proceedings of the 2nd International Conference on Nanotechnology: Fundamentals and Applications, Ottawa, Ontario, Canada, 28-29 July 2011, Paper No. 283.
4. V.K.Lazarov, L.Lari, P.M.Lytvyn, V.V.Kholevchuk and V.F.Mitin. Structural study of Ge/GaAs thin films. The Electron Microscopy & Analysis Groups Conference 2011 (EMAG 2011), 6-9 September 2011, University of Birmingham, UK (paper submitted to Journal of Physics: Conference Series).
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