Publications
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Effect of active actions on the properties of semiconductor materials and structures:  "Effect of active actions on the properties of semiconductor materials and structures"/ E.D.Atanassova, A.E.Belyaev, R.V.Konakova, P.M.Lytvyn, V.V.Milenin, V.F.Mitin, V.V.Shynkarenko - Kharkiv: NTC "Inst. for Single Crystals", 2007.- pages - 216 (book).
E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spassov, Trap parameters and conduction mechanism in HfO2–Ta2O5 mixed stacks in response to microwave irradiation. Microelectronic Engineering, 87, 2294-2300 (2010). E.Atanassova, P.Lytvyn, R.V.Konakova, V.F.Mitin and D.Spassov. Conductive-atomic force microscopy characterization of Ta2O5/SiO2 stacks and the effect of microwave irradiation. Journal of Physics D: Applied Physics, 42, 145301 (2009). E.Yu.Kolyadina, R.V.Konakova, L.A.Matveeva, V.F.Mitin, V.V.Shynkarenko, E.Atanassova. Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 11, N.4, pp. 311-318 (2008). E.Atanassova, V.F.Mitin, R.V.Konakova, D.Spassov and V.V.Schinkarenko. Microwave irradiation impact on Ta2O5 stack capacitors with different gates. Semiconductor Science and Technology Vol. 23, No. 3, 035004 (2008). E.Atanassova, R.V.Konakova, V.F.Mitin, D.Spasov, O.S.Lytvyn, V.V.Schinkarenko. Microwave irradiation effect on Ti-doped Ta2O5 stacked capacitors. Recent Patents on Electrical Engineering, Vol. 1, pp. 47-58 (2008). E.Atanassova, R.V.Konakova, V.F.Mitin, J.Koprinarova, O.S.Lytvyn, O.B.Okhrimenko, V.V.Schinkarenko, D.Virovska, Effect of microwave radiation on the properties of Ta2O5-Si microstructures, Microelectronics Reliability, Vol. 45, pp. 123-135 (2005). E.Atanassova, A.Paskaleva, R.Konakova, D.Spassov, V.F.Mitin, Influence of radiation on thin Ta2O5-Si structures, Microelectronics Journal 32 pp. 553-562 (2001). А.В.Бобыль, К.А.Исмайлов, Р.В.Конакова, Л.Н.Кравченко, В.В.Миленин, В.Ф.Митин, И.В.Прокопенко. Влияние гадиации на явления переноса в НЕМТ-структурах AlGaAs/GaAs. Петербургский журнал электроники, No. 4, с. 25-29 (1996). |
