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OUR PRODUCTS: Temperature and Magnetic Field Sensors

Application of thermometers

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We offer Temperature and Magnetic Field Sensors

for application in various areas of cryogenic engineering and low-temperature physics

Dual function sensors for concurrent measurements of temperature and magnetic field

Ge-on-GaAs film resistance thermometers

Germanium-bulk resistance thermometers

Dual element resistance thermometer

Silicon diode temperature sensor

Calibration Services

Temperature Controllers and Monitors

multisensors


At present four types of temperature sensors with a variety of design and operating characteristics can be manufactured by MicroSensor Company.
They are:-

Ge-on-GaAs film resistance thermometers
Several versions of Ge-on-GaAs film resistance thermometers with different operating characteristics have been developed. They are intended for operation in different temperature ranges and identified, and differentiated by the labels TTR-x.
    TTR-D operating range is from 0.03 to 300 K;
    TTR-G and TTR-L operating range is from 0.3 to 400 K;
    TTR-M operating range is from 1.0 to 400 K;
    TTR-2 operating range is from 70 to 450 K;
    TTR-3 operating range is from 200 to 500 K.
Dual element thermometer (DERT)
The DERT has been designed to provide temperature measurements over a wide range, from ultralow to high temperatures, with high sensitivity and resolution over the whole range. This is achieved by using two Ge-on-GaAs film resistor elements combined in a single package which have high sensitivity over complementary ranges within the extended temperature range.

Dual function sensor (DFS)
The DFS has been developed to provide concurrent and coincident measurements of temperature (1.5 K to 400 K and 0.1 K to 400 K) and magnetic fields (up to 30 T). The DFS consists of a Ge-on-GaAs film resistance thermometer and an InSb-on-GaAs film Hall-effect magnetic field sensor combined in a single package. The DFS approach can be applied to the problem in cryogenic thermometry of temperature measurements in high magnetic fields, since, by simultaneous, direct measurements of temperature and local magnetic field, and knowledge of the field sensitivity of the thermometer it is possible to compute a correction for the field effects on the thermometer, and to provide in a compact way both temperature and magnetic field information.

Ge-bulk resistance thermometers
Several versions of Ge-bulk resistance thermometers with different operating characteristics can be produced. They cover the operating temperature range from 0.3 to 300 K.

Si diode temperature sensor for measurements of temperature in the 1.5 K to 450 K range.

The sensors provide:

    wide temperature range for operation (0.03 K to 500 K) 
    monotonic response over a wide temperature range
    small temperature reading errors for operation in magnetic fields
    small size
    extremely fast response to temperature changes
    high radiation tolerance
    high quality and low price

We also develop and produce special-purpose devices such as microcalorimeters and multi-purpose sensors. You can order it.

multisensor

 

 

We offer fourteen versions of sensors:

Sensor type

Model

Temperature range (K)

Ge-on-GaAs film resistance thermometers

TTR-D

0.03  to  300

TTR-G/0.3

0.3  to  400

TTR-G/1.0

1.0  to  400

TTR-M

1.0  to  400

TTR-2

70  to  450

TTR-3

200  to  500

Germanium-bulk resistance thermometers

 G-0.3/20

0.3  to  20

G-1.5/100

1.5 to 100

G-4/273

4.0 to  273

G-10/300

10 to  300

G-70/300

70 to  300

Silicon diode temperature sensor

DMS

1.5  to  450

Dual element resistance thermometer

DERT

0.1  to  400

Dual function sensors for concurrent measurements of temperature and magnetic field

DFS-1

1.5  to  400

 

TEMPERATURE, MAGNETIC FIELD AND MULTIFUNCTIONAL SENSORS FOR CRYOGENICS APPLICATION. TPF.pdf Download the TPF

L I T E R A T U R E

     
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  3. M. Besley, A. Szmyrka-Grzebyk,  Stability studies on Kiev cryogenic germanium resistance thermometers, Rev. Sci. Instrum., 61(4), (1990) 1303.

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  7.  V.F. Mitin,  Microsensors of temperature, magnetic field, and strain, Cryogenics, 34 (1994) 437-440.

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  9.   V.F. Mitin, Yu.A. Tkhorik, E.F. Venger,  All-purpose technology of physical sensors on the base of Ge/GaAs heterostructures, Microelectronics J. 28 (1997) 617-625.

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  11. V.F. Mitin,  Ge/GaAs heterostructures: preparation, properties, and application to sensors, Molecular Phys. Reports, 21 (1998) 71-78.

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  15. V.F. Mitin,  Miniature resistance thermometers based on Ge films on GaAs, Advances in Cryogenic Engineering, 43 (1998) 749-756.

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  29. V.K.Dugaev, G.G.Ihas, C.McKenney, V.V.Kholevchuk, V.F.Mitin, I.Yu.Nemish, E.A.Soloviev, M.Vieira,  Characterization and modelling of Ge film thermometers for low temperature measurements, Proceedings of 1st IEEE International Conference on Sensors (IEEE Sensors 2002), pp. 1275-1280, Orlando, USA, June 12-14, 2002.

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  33.   N.S.Boltovets, V.K.Dugaev, V.V.Kholevchuk, P.C.McDonald, V.F.Mitin, I.Yu.Nemish, F.Pavese, I.Peroni, P.V.Sorokin, E.A.Soloviev, E.F.Venger,  New generation of resistance thermometers based on Ge films on GaAs substrates. Themperature: Its Measurement and Control in Science and Industry, Vol. 7, edited by Dean C. Ripple, AIP, Chicago, (2003), pp.399-404.

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  35. V.F.Mitin, P.C.McDonald, F.Pavese, N.S.Boltovets, V.V.Kholevchuk, I.Yu.Nemish, V.V.Basanets, V.K.Dugaev, P.V.Sorokin, E.F.Venger, E.V.Mitin. New temperature and magnetic field sensors for cryogenic applications developed under a European Project. ICEC 20, 11-14 May 2004, Beijing, China, pp.971-974. (Zhang, Liang (EDT) /Lin, Liangzhen (EDT) /Chen, Guobang (EDT) /Publisher: Elsevier Science Ltd Published 2006/03, ISBN:0080445594 (Hard cover book).

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  37. V.F. Mitin, N.S. Boltovets, V.V. Basanets, V.V. Kholevchuk, I.Yu. Nemish, F. Pavese, P.C. McDonald. Ge/GaAs thermometers and multisensor for temperature and magnetic field measurements. Proceedings of 9th International Symposium on Temperature and Thermal Measurements in Industry and Science, “TEMPMEKO 2004”, Cavtat-Dubrovnik, Croatia, June 21-25, 2004, pp.643-648.

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  39. V.F. Mitin, N.S. Boltovets, V.V. Basanets, V.V. Kholevchuk, I.Yu. Nemish, E.V.Mitin, P.C. McDonald, F. Pavese. New thermometers and multisensors for cryogenic temperature and magnetic field measurements. Advances in Cryogenic Engineering, Vol. 51, pp.1243-1250 (2006).

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  41. V.F. Mitin, N.S. Boltovets, V.V. Kholevchuk, F. Pavese, P.C. McDonald and G.G. Ihas, Review of Ge-GaAs Thermometers and Multisensors for Measurement of Temperature and Magnetic Field in Cryogenic Applications. Proceedings of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1595-1596 (2006).

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  43. Yihui Zhou, Vadim F. Mitin, Greg Labbe, Shu-chen Liu, Ridvan Adjimambetov, and Gary G. Ihas, Sub-millimeter Size Sensors for Measurements in Cryogenic Turbulence. Proceedings of 24th International Conference on Low Temperature Physics, Orlando, Florida, USA, August 10-17, 2005, AIP Conference Proceedings 850, pp.1631-1632 (2006).

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  45. N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, V.V. Milenin, V.F. Mitin, E.V. Mitin. A silicon carbide thermistor. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol.9, N.4, pp.67-70 (2006).

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  47. N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk. Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures. Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol.9, N.2, pp.58-60 (2006).

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  55. Є.Ф.Венгер, А.С.Зенкін, Н.Л.Козелло, Б.П.Колодич, Н.М.Криницька, О.С.Кулик, В.Ф.Мітін, І.Ю.Неміш, В.В.Холевчук. Мініатюрні кремнієві діодні та германієві резистивні термометри для вимірювання низьких температур. Фізика і хімія твердого тіла, 2, 499 (2010).

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